Home Patent Forecast® Sectors Log In   Sign Up   Free Trial   Support   Contact   Pricing  
How it works Patent Forecast® Sectors Pricing Insights
Menu
Enjoy your FREE PREVIEW which shows only 2019 data and 25 documents. For full access, try it free at any time.        

Solar Thin Film Photovoltaics

Search All Patents in Solar Thin Film Photovoltaics


Patent US10374108


Issued 2019-08-06

Photovoltaic Device, Photovoltaic Module, And Method For Fabricating The Photovoltaic Device

A photovoltaic device includes: a silicon substrate having a front surface having a texture; and an amorphous silicon layer having an uneven surface corresponding to the texture, wherein the amorphous silicon layer is amorphous in peak portions and slope portions extending between the peak portions and valley portions of the uneven surface, and has crystalline regions which grow, in a pillar manner, approximately perpendicularly from a substrate surface of the silicon substrate in the valley portions, the crystalline regions being discretely present along upper ends of the valley portions, the upper ends being opposite lower ends of the valley portions, the lower ends being in contact with the silicon substrate, wherein coverage of the crystalline regions in the valley portions is higher than coverage of amorphous regions in the valley portions.


Classification


Slightly More than Average Length Specification


View the Patent Matrix® Diagram to Explore the Claim Relationships

USPTO Full Text Publication >

1 Independent Claim

  • Independent Claim 1. A photovoltaic device, comprising: a silicon substrate having a first major surface having a texture in which a plurality of pyramids are arrayed two-dimensionallyanda first amorphous silicon layer on the first major surface of the silicon substrate, the first amorphous silicon layer having an uneven surface corresponding to the texture, wherein: the first amorphous silicon layer: is amorphous in peak portions andslope portions extending between the peak portions and valley portions of the uneven surfaceand has crystalline regions which grow, in a pillar manner, approximately perpendicularly from a substrate surface of the silicon substrate in the valleyportions of the uneven surface, the crystalline regions being discretely present along upper ends of the valley portions, the upper ends being opposite lower ends of the valley portions, the lower ends being in contact with the silicon substrate, and ina cross-sectional view of the first amorphous silicon layer, coverage of the crystalline regions in the valley portions is higher than coverage of amorphous regions in the valley portions.